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| ON Semiconductort NPN Darlington Silicon Power Transistor . . . designed for general-purpose amplifier and low frequency switching applications. 2N6056 ON Semiconductor Preferred Device * High DC Current Gain -- * * * hFE = 3000 (Typ) @ IC = 4.0 Adc Collector-Emitter Sustaining Voltage -- @ 100 mA VCEO(sus) = 80 Vdc (Min) Low Collector-Emitter Saturation Voltage -- VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc = 3.0 Vdc (Max) @ IC = 8.0 Adc Monolithic Construction with Built-In Base-Emitter Shunt Resistors Rating Symbol VCEO VCB VEB IC IB Max 80 80 Unit Vdc Vdc Vdc Adc DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS 100 WATTS PD, POWER DISSIPATION (WATTS) III I IIIIIIIIIIIIIIIIIIIIIII II I III I I I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III I I II I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I II I II IIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIII II I IIII I I IIII I I I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (1) Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 8.0 16 Collector Current -- Continuous Peak Base Current 120 mAdc Watts W/_C _C Total Device Dissipation @ TC = 25_C Derate above 25_C PD 100 0.571 Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 CASE 1-07 TO-204AA (TO-3) THERMAL CHARACTERISTICS Characteristic Symbol RJC Max Unit Thermal Resistance, Junction to Case 1.75 _C/W (1) Indicates JEDEC Registered Data 100 80 60 40 20 0 0 25 50 75 100 125 TC, TEMPERATURE (C) 150 175 200 Figure 1. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2001 1 March, 2001 - Rev. 2 Publication Order Number: 2N6056/D II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII *Indicates JEDEC Registered Data. (2) Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0% *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (2) OFF CHARACTERISTICS Small-Signal Current Gain (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Magnitude of Common Emitter Small-Signal Short Circuit Current Transfer Ratio (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 3.0 Vdc) Base-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc) Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 16 mAdc) (IC = 8.0 Adc, IB = 80 mAdc) DC Current Gain (IC = 4.0 Adc, VCE = 3.0 Vdc) (IC = 8.0 Adc, VCE = 3.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (2) (IC = 100 mAdc, IB = 0) Characteristic http://onsemi.com 2N6056 2 VCEO(sus) Symbol VCE(sat) VBE(sat) VBE(on) ICEO IEBO ICEX |hfe| Cob hFE hfe Min 300 750 100 4.0 80 -- -- -- -- -- -- -- -- -- 18000 -- Max 200 2.8 4.0 2.0 3.0 2.0 0.5 5.0 0.5 -- -- -- mAdc mAdc mAdc Unit Vdc Vdc Vdc Vdc pF -- -- -- 2N6056 VCC RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS -30 V D1 MUST BE FAST RECOVERY TYPE, e.g., 1N5825 USED ABOVE IB 100 mA RC MSD6100 USED BELOW IB 100 mA SCOPE TUT V2 RB approx +12 V D1 8.0 k 50 51 0 V1 approx -8.0 V tr, tf 10 ns DUTY CYCLE = 1.0% +4.0 V 25 s for td and tr, D1 is disconnected and V2 = 0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C ts tf t, TIME ( s) tr td @ VBE(off) = 0 For NPN test circuit reverse diode, polarities and input pulses. 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 2. Switching Times Test Circuit Figure 3. Switching Times r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.2 0.3 0.5 0.7 1.0 2.0 3.0 RJC(t) = r(t) RJC RJC = 1.75C/W 2N6056 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) P(pk) 0.07 0.05 0.03 0.02 0.01 0.1 t2 DUTY CYCLE, D = t1/t2 200 300 500 700 1000 t1 5.0 7.0 10 t, TIME (ms) 20 30 50 70 100 Figure 4. Thermal Response http://onsemi.com 3 2N6056 ACTIVE-REGION SAFE OPERATING AREA 50 IC, COLLECTOR CURRENT (AMP) 20 10 TJ = 200C 0.5 ms 1.0 ms 5.0 ms 0.1 ms 5.0 2.0 1.0 0.5 0.2 0.1 dc SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) 0.05 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Safe Operating Area 10,000 hfe , SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 TC = 25C VCE = 3.0 Vdc IC = 3.0 Adc 300 TJ = 25C 200 C, CAPACITANCE (pF) Cob 100 70 50 30 0.1 Cib 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 6. Small-Signal Current Gain Figure 7. Capacitance http://onsemi.com 4 2N6056 VCE = 3.0 V VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 20,000 10,000 hFE, DC CURRENT GAIN 5000 3000 2000 1000 500 300 200 0.1 25C -55C TJ = 150C 3.0 TJ = 25C 2.6 IC = 2.0 A 2.2 1.8 1.4 1.0 0.3 4.0 A 6.0 A 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 10 20 30 Figure 8. DC Current Gain Figure 9. Collector Saturation Region 3.0 TJ = 25C 2.5 V, VOLTAGE (VOLTS) 2.0 1.5 1.0 0.5 0.1 VBE @ VCE = 3.0 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltage http://onsemi.com 5 2N6056 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N C -T- E D U V 2 2 PL SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. K M 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 6 2N6056 Notes http://onsemi.com 7 2N6056 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm to 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 for Access - then Dial 866-297-9322 ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 1-303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N6056/D |
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